Fast Switch Thyristor

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Fast Switch Thyristor

Descriptio:

Thyristor celeriter transibit, cum eadem structura ac symbolo thyristoris sistendi imperium, dum notae staticae meliores, praesertim notae dynamicae, exigunt alta frequentia applicationis rectificationis, concisionis, invertentis et frequentiae circa conversionem.In dynamica parametri velocitatis thyristoris sunt velocitatis turn celeritatis et evolutionis evolutionis, minus incompositi recuperandi incepti, et breve temporis intervallum, resurrectio critica in statu currente (di/dt) et in rate critica oriuntur extemporalitatis intentione (dv/dt).Aestimatus impetus thyristoris ieiunium intra frequentiam aestimatam non decrescit vel decrescit parum cum frequentia crescit.

Celeriter switch thyristor fabricandi vexillum et processus technologiae RUNAU Electronics ab USA introducta est ab 1980s, sicut auctor thyristor fabricandi in Sinis, turma technica RUNAU incisuras scientiam et experientiam amplam fabricandi per plus quam XXX annos acquisiverat.In basic processus fabricandi traditi, talentum technicae artis RUNAU Electronics technicae artis-statis in fabricandis thyristoris notis cum commodis productorum Europaeorum elaboraverunt, qualitas et effectus multum emendantur, magis magnum obtinet effectum in applicationibus electronicarum potentiarum; et pluris pro sociis creatus est.

Introductio:

1. Chip

Chiprum thyristor a RUNAU Electronics fabricatum est, technologiae mixturae admixtionis adhibitae.Silicon et molybdaenum laganum ad mixtionem purum aluminii (99.999%) sub magno vacuo ac caliditas environment.Administratio notarum notarum est factor praecipuus ad qualitatem thyristoris afficiendam.Scientes quomodo RUNAU Electronics praeter ad commissuram commissuram altitudinem, planiciem superficiei, cavitates mixturae plenae arte diffusionis, anuli circuli exemplar, specialem portam structuram administrare.Etiam processus specialis adhibitus est ad redigendum ferebat vitam de fabrica, ita ut celeritas internus cursoris recombinationis valde acceleraretur, vicissim recuperatio technicae custodia minuitur, et celeritas mutandi consequenter emendatur.Tales mensurae applicatae ad optimize ieiunium mutandi notas, in statu notas, et res venas fluctuare.Operatio et conductio thyristoris est certa et efficax.

2. Encapsulation

Per strictam moderationem planitatis et parallelismi lagani molybdaeni et sarcinae externae, chip et laganum molybdaenum cum sarcina externa arcte et perfecte integrabuntur.Talis resistentiam surgendi currentis optimize et alti ambitus brevissimi currentis.Et mensura electronicorum evaporationum technologiae adhibita est ad movendum spissum aluminium in superficie silicon laganum, et ruthenium stratum in superficie molybdaeni augebit lassitudines scelerisque magna resistentia, opus vitae tempus velocitatis switch thyristoris signanter augebitur.

Specificatio technica

  1. Velox thyristor switch cum mixturae speciei chip ab RUNAU Electronics factorum, range of ITAVex 200A ad 4000A et V *DRM/VRRMab 1200V ad 4500V.
  2. IGT, VGTet *Hsunt valores probativi ad 25℃, nisi aliter dictum est, omnes alii parametri sunt valores probativi sub T .jm;
  3. I2t = I'2F SM×tw/2, tw= Sinusoidalis undae dimidium currentis basi latitudinis.Ad 50Hz, I2t=0.005I2FSM (A*2S);
  4. Ad 60Hz: IFSM(8.3ms)=IFSM(10ms) ×1.066, Tj=Tj;ego2t(8.3ms)=I2t(10ms)×0.943,Tj=Tjm

Parameter:

EXEMPLUM IT(AV) A TC VDRM/VRRM V ITSM@TVJIM&10ms A I2t A *2s VTM @IT&TJ=25℃ V / A tq μs Tjm Rjc/W Rcs */W F KN m Kg CODEX
Voltage ad 1400V
KK200-** 200 55 1200~1400 2800 3.9x104 2.20 640 20 125 0.093 0.035 10 0.08 T2A
KK500-** 500 55 1200~1400 7500 2.8x105 2.00 1570 20 125 0.093 0.0080 15 0.26 T5C
KK800-** 800 55 1200~1400 12000 7.2x105 2.00 2400 20 125 0.093 0.0060 20 0.33 T7C
KK1000-** 1000 55 1200~1400 15000 1.x106 2.00 3000 20 125 0.018 0.0050 25 0.46 T8C
KK1200-** 1200 55 1200~1400 18000 1.6x106 2.00 3000 20 125 0.018 0.0050 27 0.5 T8C
KK1500-** 1500 55 1200~1400 22500 2.5x106 1.90 3000 20 125 0.016 0.0045 28 0.65 T10C
KK1800-** 1800 55 1200~1400 25200 3.2x106 1.90 3000 20 125 0.014 0.0045 30 0.72 T11C
KK2400-** 2400 55 1200~1400 33600 5.6x106 1.70 3000 22 125 0.0120 0.0040 33 0.72 T11C
KK3000-** 3000 55 1200~1400 42000 8.8x106 1.60 3000 22 125 0.035 0.0030 35 0.72 T13C
Voltage ad 2000V
KK500-** 500 55 1600~2000 7000 2.5x105 2.50 1570 30 125 0.093 0.0080 15 0.26 T5C
KK800-** 800 55 1600~2000 11200 6.3x105 2.60 2400 30 125 0.093 0.0060 20 0.33 T7C
KK1000-** 1000 55 1600~2000 14000 9.8x105 2.40 3000 30 125 0.018 0.0050 25 0.46 T8C
KK1200-** 1200 55 1600~2000 16800 1.4x106 2.30 3000 30 125 0.018 0.0050 27 0.5 T8C
KK1500-** 1500 55 1600~2000 21000 2.2x106 2.20 3000 30 125 0.016 0.0050 28 0.65 T9C
KK1800-** 1800 55 1600~2000 25200 3.2x106 2.10 3000 35 125 0.014 0.0045 30 0.72 T11C
KK2000-** 2000 55 1600~2000 28000 3.9x106 2.00 3000 35 125 0.0125 0.0040 33 0.85 T11C
KK2700-** 2700 55 1600~2000 37800 7.1x106 1.90 3000 40 125 0.035 0.0030 35 1.1 T13C
KK3600- ** 3600 55 1600~2000 50400 12.5x106 1.40 3000 40 125 0.0080 0.0020 60 1.3 T14C
Voltage ad 3000V
KK1000-** 1000 55 2500~3000 12000 7.2x105 2.90 3000 55 125 0.018 0.0050 25 0.46 T8C
KK1200-** 1200 55 2500~3000 14400 1.0x106 2.80 3001 55 125 0.018 0.0050 27 0.5 T8C
KK1500-** 1500 55 2500~3000 18500 1.7x106 2.70 3002 60 125 0.016 0.0050 28 0.65 T9C
KK1800-** 1800 55 2500~3000 21600 2.3x106 2.60 3003 60 125 0.014 0.0045 30 0.72 T11C
KK2000-** 2000 55 2500~3000 24000 2.9x106 2.40 3004 60 125 0.0125 0.0040 33 0.85 T11C
KK2500-** 2500 55 2500~3000 30000 4.5x106 2.20 3005 60 125 0.035 0.0030 35 1.1 T13C
KK3000-** 3000 55 2500~3000 36000 6.5x106 1.90 3006 60 125 0.0080 0.0020 60 1.4 T15C
KK4000-** 4000 55 2500~3000 48000 1.2x107 1.80 3007 60 125 0.0060 0.0015 80 1.9 T16D
Voltage ad 3500V
KK1800-** 1800 55 3200~3500 21600 2.3x106 2.90 3000 80 125 0.035 0.0030 35 1.1 T13C
KK2500-** 2500 55 3200~3500 30000 4.5x106 2.50 3000 80 125 0.0080 0.0020 60 1.4 T15C
Voltage ad 4500V
KK3708-** 3708 55 4500 50000 1.3x107 2.10 4000 250 125 0.0060 0.0015 80 1.9 T16D

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