Press-Pack IGBT
Press-pack IGBT (IEGT)
| EXEMPLUM | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc /W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.093 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.093 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Nota:D- cum d *iode part, A .-sine diode parte
Placito, solida contactum IGBT modulorum applicata sunt in calces transigendis systematis transmissionis flexibilis DC.In sarcina moduli unius lateris caloris est dissipatio.Facultas fabricae potestas est limitata et non propria in serie connexa, pauper vita in sal aerem, pauper tremor anti-incursu vel scelerisque fatigationis.
Novum genus press-contactus summus potentiae torcularis IGBT fabrica non solum problemata vacationis in processu solidandi totaliter solvit, thermarum defatigationis materiam solidandi et infimum efficientiam unius partis caloris dissipationis, sed etiam eliminat scelerisque resistentiam inter varias partes; magnitudine et pondere magna.Et signanter emendavit efficientiam operationem et constantiam machinae IGBT.Satis idoneus est ad satisfaciendum summus potentiae, summus intentionis, summus reliability requisita systematis transmissionis flexibilis DC.
Substitutio solidae contactus generis per press-pack IGBT imperativi est.
Ab anno 2010, Runau Electronics elaboratum est ad novum genus press-pack IGBT fabrica explicandum et productionem in MMXII impetravit. Effectus qualificatio nationalis certificata est et res incisa peracta est.
Nunc possumus efficere ac praebere seriem torcularis IGBT of IC range in 600A ad 3000A et VCES vagari in 1700V ad 6500V.Praeclara exspectatio torcularis IGBT facta in Sinis applicanda in Sinis systematis transmissionis flexibilis DC valde expectatur et fiet aliud genus mundi miliarium lapideum Sinarum potentiae electronicarum industriam post electricum tramen altum celeritatem.
Brevis Introductio Typical Modus:
1. Modus: Press-pack IGBT CSG07E1700
●Electrical characteres post packaging et urgeat
Reverseparallelaconnexaieiunium recuperatio diodeconcludi
Parameter：
Ratum valorem（25℃）
a.Collector Emitte intentione: VGES=700（V）
b.Porta Emitte intentione: VCES=±20（V）
c.Collector Current: IC=800（A）ICP=600A）
d.Collector Power Dissipation: PC=4440（W）
e.Temperature adiunctae: Tj=－20~125℃
f.Repono Temperature: Tstg=－40~125℃
Notandum: fabrica laedantur si ultra valorem rated
ElectricalCnotis, TC＝125℃，Rth (scelerisque resistentiamconiunctas tocasus.non includitur
a.Porta lacus Current: IGES=±5（μA）
b.Collector Emitte Clausus Current ICES=250（mA）
c.Collector Emitter Saturationis Voltage: VCE(sat)=6(V)
d.Porta Emitte Limen Voltage: VGE(th)=10(V)
e.Verte tempus: Ton=2.5μs
f.Averte tempus: Toff = 3μs
2. Modus: Press-pack IGBT CSG10F2500
●Electrical characteres post packaging et urgeat
Reverseparallelaconnexaieiunium recuperatio diodeconcludi
Parameter：
Ratum valorem（25℃）
a.Collector Emitte Voltage: VGES=2500（V）
b.Porta Emitte intentione: VCES=±20（V）
c.Collector Current: IC=600（A）ICP=2000（A）
d.Collector Power Dissipation: PC=4800（W）
e.Temperature adiunctae sunt: Tj=－40~125℃
f.Repono Temperature: Tstg=－40~125℃
Notandum: fabrica laedantur si ultra valorem rated
ElectricalCnotis, TC＝125℃，Rth (scelerisque resistentiamconiunctas tocasus.non includitur
a.Porta lacus Current: IGES=±15（μA）
b.Collector Emitte Clausus Current ICES=25（mA）
c.Collector Emitter Saturationis Voltage: VCE(sat)=3.2 (V)
d.Porta Emitte Limen Voltage: VGE(th)=6.3(V)
e.Vertere tempus: Ton=3.2μs
f.Averte tempus: Toff=9.8μs
g.Diode Voltage: VF=3.2 V
h.Diode Reverse Recovery Time: Trr=1.0 μs
3. Modus: Press-pack IGBT CSG10F4500
●Electrical characteres post packaging et urgeat
Reverseparallelaconnexaieiunium recuperatio diodeconcludi
Parameter：
Ratum valorem（25℃）
a.Collector Emitte Voltage: VGES=4500（V）
b.Porta Emitte intentione: VCES=±20（V）
c.Collector Current: IC=600（A）ICP=2000（A）
d.Collector Power dissolutionis: PC=7700（W）
e.Temperature adiunctae sunt: Tj=－40~125℃
f.Repono Temperature: Tstg=－40~125℃
Notandum: fabrica laedantur si ultra valorem rated
ElectricalCnotis, TC＝125℃，Rth (scelerisque resistentiamconiunctas tocasus.non includitur
a.Porta lacus Current: IGES=±15（μA）
b.Collector Emitte Clausus Current ICES=50（mA）
c.Collector Emitter Saturationis Voltage: VCE(sat)=3.9 (V)
d.Porta Emitte Limen Voltage: VGE(th)=5.2 (V)
e.Vertere tempus: Ton=5.5μs
f.Averte tempus: Toff=5.5μs
g.Diode Voltage: VF=3.8 V
h.Diode Reverse Recovery Time: Trr=2.0 μs
Nota:Press-pack IGBT proficit ad longum tempus altae fiduciae mechanicae, resistentia laedendi et characteres preli connectendi structuram, opportunum est in fabrica seriei adhibenda, et cum thyristore tradito GTO comparatum, methodus voltage-coegi IGBT est .Unde facile est operari, tuto et late operando.