Diode Chip Rectifier
Diode Chip Rectifier
Diode rectificans chip a RUNAU Electronics factorum primum a GE processui et technologiae normae introducta est quae norma applicationis obsequentis USA et clientibus terrarum orbis idoneus est.Lorem in fortibus scelerisque lassitudines resistentiae notae, longae vitae usus, altae intentionis, magnae venae, aptabilitas environmental fortis, etc. Omnis chip in TJM probatur, temere inspectionem stricte non licet.Constantia lectio parametris astularum praesto est ut secundum applicationem postulationis praebeatur.
Parameter:
| Diameter mm | Crassitudo mm | Voltage V | Cathode Ex Dia. mm | Tjm ℃ |
| 17 | 1.5±0.1 | ≤2600 | 12.5 | 150 |
| 23.3 | 1.95±0.1 | ≤2600 | 18.5 | 150 |
| 23.3 | 2.15±0.1 | 4200-5500 | 16.5 | 150 |
| 24 | 1.5±0.1 | ≤2600 | 18.5 | 150 |
| 25.4 | 1.4-1.7 | ≤3500 | 19.5 | 150 |
| 29.72 | 1.95±0.1 | ≤2600 | 25 | 150 |
| 29.72 | 1.9-2.3 | 2800-5500 | 23 | 150 |
| 32 | 1.9±0.1 | ≤2200 | 27.5 | 150 |
| 32 | 2±0.1 | 2400-2600 | 26.3 | 150 |
| 35 | 1.8-2.1 | ≤3500 | 29 | 150 |
| 35 | 2.2±0.1 | 3600-5000 | 27.5 | 150 |
| 36 | 2.1±0.1 | ≤2200 | 31 | 150 |
| 38.1 | 1.9±0.1 | ≤2200 | 34 | 150 |
| 40 | 1.9-2.2 | ≤3500 | 33.5 | 150 |
| 40 | 2.2-2.5 | 3600-6500 | 31.5 | 150 |
| 45 | 2.3±0.1 | ≤3000 | 39.5 | 150 |
| 45 | 2.5±0.1 | 3600-4500 | 37.5 | 150 |
| 50.8 | 2.4-2.7 | ≤4000 | 43.5 | 150 |
| 50.8 | 2.8±0.1 | 4200-5000 | 41.5 | 150 |
| 55 | 2.4-2.8 | ≤4500 | 47.7 | 150 |
| 55 | 2.8-3.1 | 5200-6500 | 44.5 | 150 |
| 63.5 | 2.6-3.0 | ≤4500 | 56.5 | 150 |
| 63.5 | 3.0-3.3 | 5200-6500 | 54.5 | 150 |
| 70 | 2.9-3.1 | ≤3200 | 63.5 | 150 |
| 70 | 3.2±0.1 | 3400-4500 | 62 | 150 |
| 76 | 3.4-3.8 | ≤4500 | 68.1 | 150 |
| 89 | 3.9-4.3 | ≤4500 | 80 | 150 |
| 99 | 4.4-4.8 | ≤4500 | 89.7 | 150 |
Specificatio technica:
RUNAU Electronics vim praebet semiconductoris astulae diodae rectificantis et diodae glutino.
1. Maximum in-statu voltage gutta
2. Auri metallizationem applicabitur ad luxuriam et calorem dissipationis ad meliorem proprietatem.
3. Duplex iacuit praesidium mesa
Apicibus:
1. Ut melius effectus maneret, chip in nitrogenis vel vacuo condi- tionis conditione ad impediendam intentionem mutationem per oxidationem et humiditatem fragmentorum molybdaenorum causatur.
2. Semper custodite chip superficiei mundam, quaeso, caestus induere nec nudis manibus attingere spumam
3. Operamini diligenter in processu usus.Noli laedere resinae marginem superficiei chip et iacuit aluminium in area polo portae et cathode
4. In test seu encapsulatione, nota quaeso parallelismum, planitiam et fibulae vim fixturae congruere debere cum signis determinatis.Pauper parallelismus in inaequali pressione et chip damnum vi evenit.Si fibulae excessus vis impositae, spumae facile laedatur.Fibulae si impositum vis angusta est, pauper contactus et calor dissipatio applicatio afficiet.
5. Pressio scandali in contactu cum cathode superficiei chip ananeled debet
Suadeo Fibulae Force
| Chips Size | Fibulae Force commendationem |
| KN）±10% | |
| Φ25.4 | 4 |
| Φ30 vel Φ30.48 | 10 |
| Φ35 | 13 |
| Φ38 vel Φ40 | 15 |
| Φ50.8 | 24 |
| Φ55 | 26 |
| Φ60 | 28 |
| Φ63.5 | 30 |
| Φ70 | 32 |
| Φ76 | 35 |
| Φ85 | 45 |
| Φ99 | 65 |