Thyristor Chip
Thyristor Chip
Chiprum thyristor a RUNAU Electronics confectum primum a GE vexillum processui et technicae artis introductum est quod vexillum applicationis obsequens USA et clientibus terrarum orbis idoneus est.Prodest in fortibus scelerisque lassitudine resistentiae notas, longae vitae servitutis, altae intentionis, magnae currentis, aptabilitas environmental fortis, etc. Anno 2010, RUNAU Electronics novum exemplar explicavit thyristor chippis, quo traditum commodum GE et technologiae Europaeae, effectus ac efficientiae erant optimized vehementer.
Parameter:
| Diameter mm | Crassitudo mm | Voltage V | Porta Dia. mm | Cathode Inner Dia. mm | Cathode Ex Dia. mm | Tjm ℃ |
| 25.4 | 1.5±0.1 | ≤2000 | 2.5 | 5.6 | 20.3 | 125 |
| 25.4 | 1.6-1.8 | 2200-3500 | 2.6 | 5.6 | 15.9 | 125 |
| 29.72 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 24.5 | 125 |
| 32 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 26.1 | 125 |
| 35 | 2±0.1 | ≤2000 | 3.8 | 7.6 | 29.1 | 125 |
| 35 | 2.1-2.4 | 2200-4200 | 3.8 | 7.6 | 24.9 | 125 |
| 38.1 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 32.8 | 125 |
| 40 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 33.9 | 125 |
| 40 | 2.1-2.4 | 2200-4200 | 3.5 | 8.1 | 30.7 | 125 |
| 45 | 2.3±0.1 | ≤2000 | 3.6 | 8.8 | 37.9 | 125 |
| 50.8 | 2.5±0.1 | ≤2000 | 3.6 | 8.8 | 43.3 | 125 |
| 50.8 | 2.6-2.9 | 2200-4200 | 3.8 | 8.6 | 41.5 | 125 |
| 50.8 | 2.6-2.8 | 2600-3500 | 3.3 | 7 | 41.5 | 125 |
| 55 | 2.5±0.1 | ≤2000 | 3.3 | 8.8 | 47.3 | 125 |
| 55 | 2.5-2.9 | ≤4200 | 3.8 | 8.6 | 45.7 | 125 |
| 60 | 2.6-3.0 | ≤4200 | 3.8 | 8.6 | 49.8 | 125 |
| 63.5 | 2.7-3.1 | ≤4200 | 3.8 | 8.6 | 53.4 | 125 |
| 70 | 3.0-3.4 | ≤4200 | 5.2 | 10.1 | 59.9 | 125 |
| 76 | 3.5-4.1 | ≤4800 | 5.2 | 10.1 | 65.1 | 125 |
| 89 | 4-4.4 | ≤4200 | 5.2 | 10.1 | 77.7 | 125 |
| 99 | 4.5-4.8 | ≤3500 | 5.2 | 10.1 | 87.7 | 125 |
Specificatio technica:
RUNAU Electronics vim praebet semiconductorem chippis phaseli thyristoris sobrie et thyristoris celeriter switch.
1. Maximum in-statu voltage gutta
2. Aluminii crassitudo iacuit plus quam 10 microns
3. Duplex iacuit praesidium mesa
Apicibus:
1. Ut melius effectus maneret, chip in nitrogenis vel vacuo condi- tionis conditione ad impediendam intentionem mutationem per oxidationem et humiditatem fragmentorum molybdaenorum causatur.
2. Semper custodite chip superficiei mundam, quaeso, caestus induere nec nudis manibus attingere spumam
3. Operamini diligenter in processu usus.Noli laedere resinae marginem superficiei chip et iacuit aluminium in area polo portae et cathode
4. In test seu encapsulatione, nota quaeso parallelismum, planitiam et fibulae vim fixturae congruere debere cum signis determinatis.Pauper parallelismus in inaequali pressione et chip damnum vi evenit.Si fibulae excessus vis impositae, spumae facile laedatur.Fibulae si impositum vis angusta est, pauper contactus et calor dissipatio applicatio afficiet.
5. Pressio scandali in contactu cum cathode superficiei chip ananeled debet
Suadeo Fibulae Force
| Chips Size | Fibulae Force commendationem |
| KN）±10% | |
| Φ25.4 | 4 |
| Φ30 vel Φ30.48 | 10 |
| Φ35 | 13 |
| Φ38 vel Φ40 | 15 |
| Φ50.8 | 24 |
| Φ55 | 26 |
| Φ60 | 28 |
| Φ63.5 | 30 |
| Φ70 | 32 |
| Φ76 | 35 |
| Φ85 | 45 |
| Φ99 | 65 |