Thyristor Diode amet

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Thyristor/Diode amet

Descriptio:

 

Diode modulus etiam modulus rectificor appellatur, suus duo machinae electrodes, vena conductiva una tantum parte concessa est, directio adversa obstruetur.Diode modulus ex uno PN coniunctae et duo electrodes externae componitur.Electrode plumbum e strato P-type est anode-A, electrode plumbi ex N-typo strato cathode-K est.Maxime usus est ad postulationem rectificandam animadvertere.Proprie applicatur in copia rectificandi potentiae, ut electroplating, electrolysis, glutino electrica, arcus plasmatis tractus, emissio et missio, ac confirmatio intentionis.

 

Connection Circuit

Thyristor Diode amet

Introductio:

  1. Sarcina structurae diodi moduli per RUNAU Electronics fabricatorum structurae compressae et solidariae sunt.Pro current mediocris plus quam 160A, constructio thyristoris moduli compressi valde commendatur.
  2. Chipum thyristor sub USA fabricandi vexillum productum cum VfM humilis, parva potentia consummatio.
  3. DCB et ALN substrata in alta planitudine efficiet robur et stabilitatem compositionis compressae cum thyristo- risto, optima conductivity scelerisque, dissipatione caloris festinantis, altioris odii impetus impetus currentis et intentionis.
  4. Basis bractea solitaria erat et solitudo in 2500V gradu ad salutem humanam tuendam.
  5. Moduli species comprimi structurae moduli pulchrior est.Mediocres, minus ponderis, facile instituere et conservare.
  6. Vita euismod, operandi efficacia et characteres altiores structurae solidae moduli sunt.
  7. Modus Europaeus sarcina moduli seriei D praesto est ut praebeatur.

 

Specificatio technica

  1. Diode modulus in compressione structurae RUNAU Electronics fabricatarum, range of IFAVex 90A ad 1200A et V *RRMab 1200V ad 4500V.
  2. Moduli refrigerationis modus IFAVminor quam 350A est vis aeris refrigerantis, dum plus quam 400A est aer refrigerans vel aqua refrigerans secundum applicationem applicationis.
  3. Ut diode moduli operandi sub condicione tuta et normali observantia, hodierna diodi moduli delecti commendatur pro 2-3 temporibus currentis oneris aestimati praeter characterem oneris.
  4. Diode modulus in aere refrigerante heatsink constitutus, uncto silica scelerisque suggeritur aequaliter diffundi inter laminam moduli basin et superficiem heatsink.Ligamentum vis 4 fulminum figere moduli in heatsink debet etiam talis superficies laminae moduli basin et heatsink arcte coniungetur ut calor effectus invigilet.

 

 

 

 

 

Parameter:

Type IT(AV)
@85℃
A
VDRM/VRRM
V
IDRM/IRRM
V=VDRM/VRRM
@125℃
Max ma
VTM/VFM
@25℃
Max / ITM
V / A
IGT
mA
VGT
VD= 12V
@25℃
V
IH
mA
dV/dt
VD=2/3VDRM
@125℃
Min
V/μs
VISO
50Hz,RMS 2mA,1min @25℃
Min
V
Adumbrare
MFC/MFK/MFA/MFX 1200-2000V (Aeris refrigeratio)
MF*90-** 90 1200-2000 15 1.45/1.3 270 30-100 0.8-2.2 20-120 1000 2500 M2-20
MF* 110-** 110 1200-2000 15 1.45/1.3 330 30-100 0.8-2.2 20-120 1000 2500 M2-20
MF* 135-** 135 1200-2000 25 1.45/1.3 400 30-100 0.8-2.2 20-120 1000 2500 M2-34
MF*160-** 160 1200-2000 25 1.45/1.3 480 30-100 0.8-2.2 20-120 1000 2500 M2-34
MF* 185-** 185 1200-2000 35 1.45/1.3 560 30-100 0.8-2.2 20-120 1000 2500 M2-34
MF*200-** 200 1200-2000 20 1.45/1.3 600 30-100 0.8-2.2 20-120 1000 2500 M2-36
MF*200-** 200 1200-2000 20 1.45/1.3 600 30-100 0.8-2.2 20-120 1000 2500 M4-53
MF*250-** 250 1200-2000 20 1.45/1.3 750 30-100 0.8-2.2 20-120 1000 2500 M4-53
MF*300-** 300 1200-2000 20 1.45/1.3 900 30-100 0.8-2.2 20-120 1000 2500 M4-53
MF* 350-** 350 1200-2000 35 1.45/1.3 1050 30-100 0.8-2.2 20-120 1000 2500 M4-53
MF* 400-** 400 1200-2000 45 1.45/1.3 1200 30-100 0.8-2.2 20-120 1000 2500 M4-63
MF*D-** 500 1200-2000 45 1.45/1.3 1500 30-100 0.8-2.2 20-120 1000 2500 M4-63
MF*600-** 600 1200-2000 55 1.45/1.3 1800 30-100 0.8-2.2 20-120 1000 2500 M4-66
MF*800-** 800 1200-2000 65 1.6/1.3 2400 30-100 0.8-2.2 20-120 1000 2500 M4-76
MF*1000-** 1000 1200-2000 65 1.6/1.3 3000 30-100 0.8-2.2 20-120 1000 2500 M4-77
MFC/MFK/MFA/MFX 2200-3500V (Aeris refrigeratio)
MF*160-** 160 2200-3500 30 2.2/2 480 30-100 0.8-2.2 20-120 1000 2500-4000 M2-34
MF*200-** 200 2200-3500 35 1.8/1.6 600 30-100 0.8-2.2 20-120 1000 2500-4000 M4-53
MF*250-** 250 2200-3500 35 1.9/1.7 750 30-100 0.8-2.2 20-120 1000 2500-4000 M4-53
MF*300-** 300 2200-3500 35 1.9/1.7 900 30-100 0.8-2.2 20-120 1000 2500-4000 M4-53
MF* 350-** 350 2200-3500 50 2/1.8 1050 30-100 0.8-2.2 20-120 1000 2500-4000 M4-53
MF* 400-** 400 2200-3500 50 2.1/1.9 1200 30-100 0.8-2.2 20-120 1000 2500-4000 M4-63
MF*D-** 500 2200-3500 50 2.1/1.9 1500 30-100 0.8-2.2 20-120 1000 2500-4000 M4-63
MF*600-** 600 2200-3500 60 2/1.8 1800 30-100 0.8-2.2 20-120 1000 2500-4000 M4-66
MF*800-** 800 2200-3500 70 2.15/1.95 2400 30-100 0.8-2.2 20-120 1000 2500-4000 M4-76
MF*1000-** 1000 2200-3500 80 2.2/2 3000 30-100 0.8-2.2 20-120 1000 2500-4000 M4-77
MFC/MFK/MFA/MFX 3600-4500V (Aeris refrigeratio)
MF*160-** 160 3600-4500 30 2.4/2.2 480 30-100 0.8-2.2 20-120 1000 4000-5000 M4-34
MF*200-** 200 3600-4500 35 2.0/1.8 600 30-120 0.8-2.2 20-120 1000 4000-5000 M4-53
MF*250-** 250 3600-4500 35 2.1/1.9 750 30-120 0.8-2.2 20-120 1000 4000-5000 M4-53
MF*300-** 300 3600-4500 35 2.2/2.0 900 30-120 0.8-2.2 20-120 1000 4000-5000 M4-53
MF* 350-** 350 3600-4500 35 2.2/2.0 1050 30-120 0.8-2.2 20-120 1000 4000-5000 M4-53
MF* 400-** 400 3600-4500 70 2.5/2.3 1200 30-120 0.8-2.2 20-120 1000 4000-5000 M4-63
MF*D-** 500 3600-4500 70 2.6/2.4 1500 30-120 0.8-2.2 20-120 1000 4000-5000 M4-63
MF*600-** 600 3600-4500 70 2.5/2.3 1800 30-120 0.8-2.2 20-120 1000 4000-5000 M4-66
MF*800-** 800 3600-4500 80 2.4/2.2 2400 30-120 0.8-2.2 20-120 1000 4000-5000 M4-76
MF*1000-** 1000 3600-4500 80 2.5/2.3 3000 30-120 0.8-2.2 20-120 1000 4000-5000 M4-77
MFC/MFK/MFA/MFX 1200-2000V (Aquae refrigerationis)
MF* 400-** 400 1200-2000 35 1.5/1.3 1200 30-100 0.8-2.2 20-120 1000 2500 M4-53-S
MF*D-** 500 1200-2000 45 1.5/1.3 1500 30-100 0.8-2.2 20-120 1000 2500 M4-63-S
MF*600-** 600 1200-2000 55 1.5/1.3 1800 30-100 0.8-2.2 20-120 1000 2500 M4-66-S
MF*800-** 800 1200-2000 65 1.6/1.3 2400 30-100 0.8-2.2 20-120 1000 2500 M4-76-S
Note * - connexion modus ** -module voltage

YpackTMSeries High Standard Thyristor Module

Type

IT(AV)
@85℃
A

VDRM/VRRM
V

IDRM/IRRM
V=VDRM/VRRM
@125℃
Max ma

VTM/VFM
@25℃
Max / ITM
V / A

IGT
mA

VGT
VD= 12V
@25℃
V

IH
mA

dV/dt
VD==2/3VDRM
@125℃
Min
V/μs

VISO
50Hz,RMS 2mA,1min @25℃
Min
V

Adumbrare

YpackTMPrinceps Reliability Thyristor /Diode amet

TD162-**

160

1200-2000

20

1.45/1.3

480

30-100

0.8-2.2

20-120

1000

2500

M2-34

TD200-**

200

1200-2000

20

1.45/1.3

600

30-100

0.8-2.2

20-120

1000

2500

M2-34

TD250-**

250

1200-2000

20

1.45/1.3

750

30-100

0.8-2.2

20-120

1000

2500

M4-50

TD300-**

300

1200-2000

35

1.45/1.3

900

30-100

0.8-2.2

20-120

1000

2500

M4-50

TD400-**

400

1200-2000

45

1.45/1.3

1200

30-100

0.8-2.2

20-120

1000

2500

M4-60

TD500-**

500

1200-2000

55

1.45/1.3

1500

30-100

0.8-2.2

20-120

1000

2500

M4-60

TD570-**

570

1200-2000

65

1.45/1.3

1500

30-100

0.8-2.2

20-120

1000

2500

M4-60

Note * - connexion modus ** -module voltage

YpackTMseries princeps vexillum thyristor/diode moduli cum YA et YC serie xxxiii fasciculata est.Cogitatus usorum designatus est cum superiori necessitate et effectu.

 

 


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